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1N4148

DISCRETE SEMICONDUCTORS

DATA SHEET

M3D176

1N4148; 1N4446; 1N4448 High-speed diodes
Product speci?cation Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 Apr 15

Philips Semiconductors

Product speci?cation

High-speed diodes
FEATURES ? Hermetically sealed leaded glass SOD27 (DO-35) package ? High switching speed: max. 4 ns ? General application ? Continuous reverse voltage: max. 75 V ? Repetitive peak reverse voltage: max. 75 V ? Repetitive peak forward current: max. 450 mA ? Forward voltage: max. 1 V.
The diodes are type branded.
handbook, halfpage k

1N4148; 1N4446; 1N4448
DESCRIPTION The 1N4148, 1N4446, 1N4448 are high-speed switching diodes fabricated in planar technology, and encapsulated in hermetically sealed leaded glass SOD27 (DO-35) packages.

a

MAM246

APPLICATIONS ? High-speed switching.

Fig.1 Simplified outline (SOD27; DO-35) and symbol.

LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR IF IFRM IFSM PARAMETER repetitive peak reverse voltage continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.4 t = 1 ?s t = 1 ms t=1s Ptot Tstg Tj Note 1. Device mounted on an FR4 printed circuit-board; lead length 10 mm. total power dissipation storage temperature junction temperature Tamb = 25 °C; note 1 ? ? ? ? ?65 ? 4 1 0.5 500 +200 200 A A A mW °C °C see Fig.2; note 1 CONDITIONS MIN. ? ? ? ? MAX. 75 75 200 450 V V mA mA UNIT

1996 Apr 15

2

Philips Semiconductors

Product speci?cation

High-speed diodes
ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise speci?ed. SYMBOL VF 1N4148 1N4446 1N4448 IR IR Cd trr reverse current reverse current; 1N4448 diode capacitance reverse recovery time PARAMETER forward voltage see Fig.3 IF = 10 mA IF = 20 mA IF = 5 mA IF = 100 mA VR = 20 V; see Fig.5 CONDITIONS

1N4148; 1N4446; 1N4448

MIN. ? ? 0.62 ? ? ?

MAX. 1.0 1.0 0.72 1.0 25 50 3 4 4 V V V V

UNIT

nA ?A ?A pF ns

VR = 20 V; Tj = 150 °C; see Fig.5 VR = 20 V; Tj = 100 °C; see Fig.5 f = 1 MHz; VR = 0; see Fig.6 when switched from IF = 10 mA to IR = 60 mA; RL = 100 ?; measured at IR = 1 mA; see Fig.7 when switched from IF = 50 mA; tr = 20 ns; see Fig.8

Vfr

forward recovery voltage

?

2.5

V

THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on a printed circuit-board without metallization pad. PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient CONDITIONS lead length 10 mm lead length 10 mm; note 1 VALUE 240 350 UNIT K/W K/W

1996 Apr 15

3

Philips Semiconductors

Product speci?cation

High-speed diodes
GRAPHICAL DATA

1N4148; 1N4446; 1N4448

handbook, halfpage

300

MBG451

handbook, halfpage

600

MBG464

IF (mA) 200

IF (mA) 400
(1) (2) (3)

100

200

0 0 100 Tamb (oC) 200

0 0 (1) Tj = 175 °C; typical values. (2) Tj = 25 °C; typical values. (3) Tj = 25 °C; maximum values. 1 VF (V) 2

Device mounted on an FR4 printed-circuit board; lead length 10 mm.

Fig.2

Maximum permissible continuous forward current as a function of ambient temperature.

Fig.3

Forward current as a function of forward voltage.

102 handbook, full pagewidth IFSM (A)

MBG704

10

1

10?1 1 10

102

103

tp (?s)

104

Based on square wave currents. Tj = 25 °C prior to surge.

Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.

1996 Apr 15

4

Philips Semiconductors

Product speci?cation

High-speed diodes

1N4148; 1N4446; 1N4448

103 handbook, halfpage IR (?A)

MGD290

MGD004

handbook, halfpage

1.2

102

Cd (pF) 1.0
(1) (2)

10 0.8 1

10?1

0.6

10?2 0 100 Tj (oC) 200

0.4 0 10 VR (V) 20

(1) VR = 75 V; typical values. (2) VR = 20 V; typical values.

f = 1 MHz; Tj = 25 °C.

Fig.5

Reverse current as a function of junction temperature.

Fig.6

Diode capacitance as a function of reverse voltage; typical values.

1996 Apr 15

5

Philips Semiconductors

Product speci?cation

High-speed diodes

1N4148; 1N4446; 1N4448

handbook, full pagewidth

tr D.U.T. 10% SAMPLING OSCILLOSCOPE R i = 50 ? VR 90%

tp t

RS = 50 ? V = VR I F x R S

IF

IF

t rr t

(1)

MGA881

input signal

output signal

(1) IR = 1 mA.

Fig.7 Reverse recovery voltage test circuit and waveforms.

I

1 k?

450 ?

I 90%

V

R S = 50 ?

D.U.T.

OSCILLOSCOPE R i = 50 ? 10%
MGA882

V fr

t tr tp

t

input signal

output signal

Fig.8 Forward recovery voltage test circuit and waveforms.

1996 Apr 15

6

Philips Semiconductors

Product speci?cation

High-speed diodes
PACKAGE OUTLINE

1N4148; 1N4446; 1N4448

andbook, full pagewidth

0.56 max 1.85 max 25.4 min 4.25 max 25.4 min
MLA428 - 1

Dimensions in mm.

Fig.9 SOD27 (DO-35).

DEFINITIONS Data Sheet Status Objective speci?cation Preliminary speci?cation Product speci?cation Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speci?cation is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the speci?cation. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal speci?cations for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains ?nal product speci?cations.

1996 Apr 15

7


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